[D-10-3] Etching yields of HfO2 under Ar+ and CFX+ (X = 1, 2, 3) ion beam irradiation

Kazuhiro Karahashi, Nobuhisa Yamagishi, Tsuyoshi Horikawa, Akira Toriumi (1.MIRAI Project Association of Super -Advanced Electronics Technologies (ASET), 2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Deparatment of Materials Science School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.2003.D-10-3