Selective Dry Etching of HfO2 in CF4, Cl2 and HBr Based Chemistry

Takeshi Maeda; Hiroyuki Ito; Riichiro Mitsuhashi; Atsushi Horiuchi; Takaaki Kawahara; Akiyoshi Muto; Takaoki Sasaki; Kazuyoshi Torii; Hiroshi Kitajima

doi:https://doi.org/10.7567/SSDM.2003.D-10-4

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-10-4] Selective Dry Etching of HfO2 in CF4, Cl2 and HBr Based Chemistry

Takeshi Maeda、Hiroyuki Ito、Riichiro Mitsuhashi、Atsushi Horiuchi、Takaaki Kawahara、Akiyoshi Muto、Takaoki Sasaki、Kazuyoshi Torii、Hiroshi Kitajima (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2003.D-10-4

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