Selective Dry Etching of HfO2 in CF4, Cl2 and HBr Based Chemistry

Takeshi Maeda; Hiroyuki Ito; Riichiro Mitsuhashi; Atsushi Horiuchi; Takaaki Kawahara; Akiyoshi Muto; Takaoki Sasaki; Kazuyoshi Torii; Hiroshi Kitajima

doi:https://doi.org/10.7567/SSDM.2003.D-10-4

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-10-4] Selective Dry Etching of HfO2 in CF4, Cl2 and HBr Based Chemistry

Takeshi Maeda, Hiroyuki Ito, Riichiro Mitsuhashi, Atsushi Horiuchi, Takaaki Kawahara, Akiyoshi Muto, Takaoki Sasaki, Kazuyoshi Torii, Hiroshi Kitajima (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2003.D-10-4

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