Impact of NiSi Thermal Instability on Junction Shallowing Characterized with Damage-free n+/p Silicon Diodes

Masakatsu Tsuchiaki; Kazuya Ohuchi; Chie Hongo

doi:https://doi.org/10.7567/SSDM.2003.D-2-6

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-2-6] Impact of NiSi Thermal Instability on Junction Shallowing Characterized with Damage-free n+/p Silicon Diodes

Masakatsu Tsuchiaki、Kazuya Ohuchi、Chie Hongo (1.Corporate Research & Development Center, Toshiba Corporation.、2.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.D-2-6

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