[D-3-1] Strained Si MOSFETs on SiGe-on-Insulator (SGOI) for High Performance CMOS Technology

K. Rim、B.H. Lee、A. Mocuta、K. Jenkins、S. Bedell、H. Chen、D. Sadana、M. Gribelyuk、J. Ott、K. Chan、L. Shi、J. Chu、D. Boyd、P. Mooney、P. O’Neil、E. Leobandung、J.J. Welser (1.IBM Semiconductor Research and Development Center (SRDC) Research Division, T. J. Watson Research Center、2.Microelectronics Division)

https://doi.org/10.7567/SSDM.2003.D-3-1