Novel SOI MOSFETs with Buried Back-Gate

Hyuckjae Oh; Hoon Choi; Takeshi Sakaguchi; JeoungChill Shim; Hiroyuki Kurino; Mitsumasa Koyanagi

doi:https://doi.org/10.7567/SSDM.2003.D-4-2

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-4-2] Novel SOI MOSFETs with Buried Back-Gate

Hyuckjae Oh、Hoon Choi、Takeshi Sakaguchi、JeoungChill Shim、Hiroyuki Kurino、Mitsumasa Koyanagi (1.Dept. of Bioengineering and Robotics , Tohoku University、2.Venture Business Laboratory, Tohoku University)

https://doi.org/10.7567/SSDM.2003.D-4-2

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