Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

Koji Kita; Masashi Sasagawa; Kazuyuki Tomida; Kentaro Kyuno; Akira Toriumi

doi:https://doi.org/10.7567/SSDM.2003.D-6-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-6-3] Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

Koji Kita, Masashi Sasagawa, Kazuyuki Tomida, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2003.D-6-3

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