Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

Koji Kita; Masashi Sasagawa; Kazuyuki Tomida; Kentaro Kyuno; Akira Toriumi

doi:https://doi.org/10.7567/SSDM.2003.D-6-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-6-3] Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

Koji Kita、Masashi Sasagawa、Kazuyuki Tomida、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2003.D-6-3

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