Thermal Instability of Poly-Si Gate Al2O3 MOSFETs

W.S. Kim; T. Kawahara; H. Itoh; H. Horiuchi; A. Muto; T. Maeda; R. Mitsuhashi; K. Torii; H. Kitajima

doi:https://doi.org/10.7567/SSDM.2003.D-8-1

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-8-1] Thermal Instability of Poly-Si Gate Al2O3 MOSFETs

W.S. Kim, T. Kawahara, H. Itoh, H. Horiuchi, A. Muto, T. Maeda, R. Mitsuhashi, K. Torii, H. Kitajima (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2003.D-8-1

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