ZnO Metal-Insulator-Semiconductor Field-Effect-Transistors

Junya Nishii; Akira Ohtomo; Tomoteru Fukumura; Keita Ohtani; Fumihiro Matsukura; Yuzo Ohno; Hideo Ohno; Masashi Kawasaki

doi:https://doi.org/10.7567/SSDM.2003.E-1-7

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[E-1-7] ZnO Metal-Insulator-Semiconductor Field-Effect-Transistors

Junya Nishii, Akira Ohtomo, Tomoteru Fukumura, Keita Ohtani, Fumihiro Matsukura, Yuzo Ohno, Hideo Ohno, Masashi Kawasaki (1.Tohoku Univ., Institute for Materials Research, 2.Tohoku Univ., Research Institute of Electrical Communication)

https://doi.org/10.7567/SSDM.2003.E-1-7

▲