[E-6-5] Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin SOI MOSFET and Its Application to Si Single-Electron Transistor

Seiji Horiguchi、Akira Fujiwara、Hiroshi Inokawa、Yasuo Takahashi (1.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2003.E-6-5