[E-8-2] Top-Gate Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance

Fumiyuki Nihey, Hiroo Hongo, Yukinori Ochiai, Masako Yudasaka, Sumio Iijima (1.Fundamental Research Laboratories, NEC Corporation, 2.Japan Science and Technology Corporation, c/o NEC Corporation, 3.Japan Fine Ceramics Center, c/o National Institute of Advanced Industrial Science and Technology (AIST), 4.Research Center for Advanced Carbon Materials, AIST, 5.Faculty of Science and Technology, Meijo University)

https://doi.org/10.7567/SSDM.2003.E-8-2