[E-8-2] Top-Gate Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance

Fumiyuki Nihey、Hiroo Hongo、Yukinori Ochiai、Masako Yudasaka、Sumio Iijima (1.Fundamental Research Laboratories, NEC Corporation、2.Japan Science and Technology Corporation, c/o NEC Corporation、3.Japan Fine Ceramics Center, c/o National Institute of Advanced Industrial Science and Technology (AIST)、4.Research Center for Advanced Carbon Materials, AIST、5.Faculty of Science and Technology, Meijo University)

https://doi.org/10.7567/SSDM.2003.E-8-2