[F-1-2] High ft 30nm In0.7GaAs HEMT fabricated with SiO2/SiNx sidewall gate Process and BCB Planarization

Dae-Hyum Kim、Seong-Jin Yeon、Saeng-Sub Song、Kwang-Seok Seo (1.School of Electrical and Computer Engineering, Seoul National University)

https://doi.org/10.7567/SSDM.2003.F-1-2