[F-2-3] Improvement of DC and RF characteristics of AlGaN/GaN HEMTs by thermally annealed Ni/Pt/Au Schottky gate

Takuma Nanjo、Naruhisa Miura、Toshiyuki Oishi、Muneyoshi Suita、Yuji Abe、Tatsuo Ozeki、Shigenori Nakatsuka、Akira Inoue、Takahide Ishikawa、Yoshio Matsuda、Hiroyasu Ishikawa、Takashi Egawa (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.Microwave Device Development Dept., Mitsubishi Electric Corporation、3.Research Center for Nano-Device and System, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2003.F-2-3