[F-2-3] Improvement of DC and RF characteristics of AlGaN/GaN HEMTs by thermally annealed Ni/Pt/Au Schottky gate

Takuma Nanjo, Naruhisa Miura, Toshiyuki Oishi, Muneyoshi Suita, Yuji Abe, Tatsuo Ozeki, Shigenori Nakatsuka, Akira Inoue, Takahide Ishikawa, Yoshio Matsuda, Hiroyasu Ishikawa, Takashi Egawa (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Microwave Device Development Dept., Mitsubishi Electric Corporation, 3.Research Center for Nano-Device and System, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2003.F-2-3