Uniformity studies of MOCVD grown AlGaN/GaN HEMTs on 100-mm diameter sapphire

S. Arulkumaran; M. Miyoshi; T. Egawa; H. Ishikawa; T. Jimbo

doi:https://doi.org/10.7567/SSDM.2003.F-3-4L

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-3-4L] Uniformity studies of MOCVD grown AlGaN/GaN HEMTs on 100-mm diameter sapphire

S. Arulkumaran, M. Miyoshi, T. Egawa, H. Ishikawa, T. Jimbo (1.Research Center for Nano-Device and System, Nagoya Institute of Technology, 2.On Leave from NGK Insulators Ltd.)

https://doi.org/10.7567/SSDM.2003.F-3-4L

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