The Japan Society of Applied Physics

[F-3-4L] Uniformity studies of MOCVD grown AlGaN/GaN HEMTs on 100-mm diameter sapphire

S. Arulkumaran、M. Miyoshi、T. Egawa、H. Ishikawa、T. Jimbo (1.Research Center for Nano-Device and System, Nagoya Institute of Technology、2.On Leave from NGK Insulators Ltd.)

https://doi.org/10.7567/SSDM.2003.F-3-4L