Sub-Milliwatt Operation of 308 nm Deep UV LED using quaternary InAlGaN

Hideki Hirayama; Yoshinobu Aoyagi

doi:https://doi.org/10.7567/SSDM.2003.F-4-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-4-3] Sub-Milliwatt Operation of 308 nm Deep UV LED using quaternary InAlGaN

Hideki Hirayama、Yoshinobu Aoyagi (1.RIKEN(The Institute of Physical and Chemical Research)、2.Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering)

https://doi.org/10.7567/SSDM.2003.F-4-3

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