Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance

Akira Endoh; Yoshimi Yamashita; Keiji Ikeda; Masataka Higashiwaki; Kohki Hikosaka; Toshiaki Matsui; Satoshi Hiyamizu; Takashi Mimura

doi:https://doi.org/10.7567/SSDM.2003.G-9-2L

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[G-9-2L] Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance

Akira Endoh、Yoshimi Yamashita、Keiji Ikeda、Masataka Higashiwaki、Kohki Hikosaka、Toshiaki Matsui、Satoshi Hiyamizu、Takashi Mimura (1.Fujitsu Laboratories Ltd.、2.Communications Research Laboratory、3.Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2003.G-9-2L

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