[G-9-2L] Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance
Akira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura
(1.Fujitsu Laboratories Ltd., 2.Communications Research Laboratory, 3.Graduate School of Engineering Science, Osaka University)
https://doi.org/10.7567/SSDM.2003.G-9-2L
