Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance

Akira Endoh; Yoshimi Yamashita; Keiji Ikeda; Masataka Higashiwaki; Kohki Hikosaka; Toshiaki Matsui; Satoshi Hiyamizu; Takashi Mimura

doi:https://doi.org/10.7567/SSDM.2003.G-9-2L

[G-9-2L] Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance

Akira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura (1.Fujitsu Laboratories Ltd., 2.Communications Research Laboratory, 3.Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2003.G-9-2L

2003 International Conference on Solid State Devices and Materials

[G-9-2L] Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance