Improvement of Data Retention in Floating Gate Flash EEPROM’s with P-Doped Floating Gate

B. C. Wu; H. W. Tsai; S. S. Chung; C. J. Lin; D. S. Kuo; M. S. Liang

doi:https://doi.org/10.7567/SSDM.2003.P10-1

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P10-1] Improvement of Data Retention in Floating Gate Flash EEPROM’s with P-Doped Floating Gate

B. C. Wu, H. W. Tsai, S. S. Chung, C. J. Lin, D. S. Kuo, M. S. Liang (1.Department of Electronic Engineering, National Chiao Tung University, 2.Tsmc, Science-based Industrial Park, 3.Nexflash Inc)

https://doi.org/10.7567/SSDM.2003.P10-1

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