Improvement of Data Retention in Floating Gate Flash EEPROM’s with P-Doped Floating Gate

B. C. Wu; H. W. Tsai; S. S. Chung; C. J. Lin; D. S. Kuo; M. S. Liang

doi:https://doi.org/10.7567/SSDM.2003.P10-1

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P10-1] Improvement of Data Retention in Floating Gate Flash EEPROM’s with P-Doped Floating Gate

B. C. Wu、H. W. Tsai、S. S. Chung、C. J. Lin、D. S. Kuo、M. S. Liang (1.Department of Electronic Engineering, National Chiao Tung University、2.Tsmc, Science-based Industrial Park、3.Nexflash Inc)

https://doi.org/10.7567/SSDM.2003.P10-1

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