[P10-5] High Performance Pt/ SrBi2Ta2O9/ HfO2/ Si Structure for 1T Ferroelectric Random Access Memory

Ding-Yeong Wang、Chao-Hsin Chien、Ming-Jui Yang、Peer Lehnen、Ching-Chich Leu、Shiow-Huey Chuang、Tiao-Yuan Huang、C. Y. Chang (1.Department of Electronics Engineering, National Chiao Tung University、2.National Nano Device Laboratories、3.AIXTRON AG, Germany)

https://doi.org/10.7567/SSDM.2003.P10-5