A Novel Sensing Circuit for High Speed Synchronous MRAM

Hyejin Kim; Seungyeon Lee; Seungjun Lee; Hyungsoon Shin; Daejung Kim

doi:https://doi.org/10.7567/SSDM.2003.P10-7

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P10-7] A Novel Sensing Circuit for High Speed Synchronous MRAM

Hyejin Kim, Seungyeon Lee, Seungjun Lee, Hyungsoon Shin, Daejung Kim (1.Ewha Womans University, Dept. of Information Electronics Engineering, 2.Kookmin University, Dept. of Electronics Engineering)

https://doi.org/10.7567/SSDM.2003.P10-7

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