A Novel Sensing Circuit for High Speed Synchronous MRAM

Hyejin Kim; Seungyeon Lee; Seungjun Lee; Hyungsoon Shin; Daejung Kim

doi:https://doi.org/10.7567/SSDM.2003.P10-7

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P10-7] A Novel Sensing Circuit for High Speed Synchronous MRAM

Hyejin Kim、Seungyeon Lee、Seungjun Lee、Hyungsoon Shin、Daejung Kim (1.Ewha Womans University, Dept. of Information Electronics Engineering、2.Kookmin University, Dept. of Electronics Engineering)

https://doi.org/10.7567/SSDM.2003.P10-7

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