Thickness Dependent Device Operation of Sublimed Molecular Field-Effect Transistors

S. Hoshino; M. Yoshida; S. Uemura; T. Kodzasa; T. Kamata; K. Yase

doi:https://doi.org/10.7567/SSDM.2003.P13-2

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P13-2] Thickness Dependent Device Operation of Sublimed Molecular Field-Effect Transistors

S. Hoshino, M. Yoshida, S. Uemura, T. Kodzasa, T. Kamata, K. Yase (1.Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2003.P13-2

▲