A new Conductivity Modulated LDMOSFET employing Buried P Region and P+ Drain

Jae-Keun Oh; Byung-Chul Jeon; Min-Koo Han; Yearn-Ik Choi

doi:https://doi.org/10.7567/SSDM.2003.P2-16

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P2-16] A new Conductivity Modulated LDMOSFET employing Buried P Region and P+ Drain

Jae-Keun Oh, Byung-Chul Jeon, Min-Koo Han, Yearn-Ik Choi (1.School of Electrical Eng. ENG420-050, Seoul National University, 2.College of Electronics Eng., Ajou University)

https://doi.org/10.7567/SSDM.2003.P2-16

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