A new Conductivity Modulated LDMOSFET employing Buried P Region and P+ Drain

Jae-Keun Oh; Byung-Chul Jeon; Min-Koo Han; Yearn-Ik Choi

doi:https://doi.org/10.7567/SSDM.2003.P2-16

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P2-16] A new Conductivity Modulated LDMOSFET employing Buried P Region and P+ Drain

Jae-Keun Oh、Byung-Chul Jeon、Min-Koo Han、Yearn-Ik Choi (1.School of Electrical Eng. ENG420-050, Seoul National University、2.College of Electronics Eng., Ajou University)

https://doi.org/10.7567/SSDM.2003.P2-16

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