The Japan Society of Applied Physics

[P2-4] Novel Substrate Engineering for High Performance CMOSFETs using Channeling Ion Implantation

M. Kitazawa、T. Yamashita、Y. Kawasaki、T. Kuroi、T. Eimori、M. Inuishi、Y. Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2003.P2-4