Defect Generation in Gate Oxide by Selective Oxidation in Hydrogen-rich Wet Ambient

Heung-Jae Cho; Kwan-Yong Lim; Se-Aug Jang; Jung-Ho Lee; Jae-Geun Oh; Yong-Soo Kim; Hong-Seon Yang; Hyun-Chul Sohn

doi:https://doi.org/10.7567/SSDM.2003.P3-13

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P3-13] Defect Generation in Gate Oxide by Selective Oxidation in Hydrogen-rich Wet Ambient

Heung-Jae Cho, Kwan-Yong Lim, Se-Aug Jang, Jung-Ho Lee, Jae-Geun Oh, Yong-Soo Kim, Hong-Seon Yang, Hyun-Chul Sohn (1.Memory R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2003.P3-13

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