Effect of Vacuum Annealing on High-k Dy2O3 Thin Films Deposited on Si(100)

S. Ohmi; H. Yamamoto; J. Taguchi; K. Tsutsui; H. Iwai

doi:https://doi.org/10.7567/SSDM.2003.P4-10

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P4-10] Effect of Vacuum Annealing on High-k Dy2O3 Thin Films Deposited on Si(100)

S. Ohmi、H. Yamamoto、J. Taguchi、K. Tsutsui、H. Iwai (1.Tokyo Institute of Technology Interdisciplinary Graduate School of Science & Engineering, Dept. of Information Processing、2.Frontier Collaborative Research Center)

https://doi.org/10.7567/SSDM.2003.P4-10

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