Formation of Strained β-FeSi2(Ge) by Ge-Segregation Controlled Solid-Phase Growth of [Amorphous Si/FeSiGe]n Multi-Layered Structure

T. Sadoh; M. Owatari; Y. Murakami; A. Kenjo; T. Yoshitake; M. Itakura; M. Miyao

doi:https://doi.org/10.7567/SSDM.2003.P4-11

[P4-11] Formation of Strained β-FeSi2(Ge) by Ge-Segregation Controlled Solid-Phase Growth of [Amorphous Si/FeSiGe]n Multi-Layered Structure

T. Sadoh, M. Owatari, Y. Murakami, A. Kenjo, T. Yoshitake, M. Itakura, M. Miyao (1.Department of Electronics, Kyushu University, 2.Department of Applied Science for Electronics and Materials, Kyushu University)

https://doi.org/10.7567/SSDM.2003.P4-11

2003 International Conference on Solid State Devices and Materials

[P4-11] Formation of Strained β-FeSi2(Ge) by Ge-Segregation Controlled Solid-Phase Growth of [Amorphous Si/FeSiGe]n Multi-Layered Structure