Formation of Strained β-FeSi2(Ge) by Ge-Segregation Controlled Solid-Phase Growth of [Amorphous Si/FeSiGe]n Multi-Layered Structure

T. Sadoh; M. Owatari; Y. Murakami; A. Kenjo; T. Yoshitake; M. Itakura; M. Miyao

doi:https://doi.org/10.7567/SSDM.2003.P4-11

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P4-11] Formation of Strained β-FeSi2(Ge) by Ge-Segregation Controlled Solid-Phase Growth of [Amorphous Si/FeSiGe]n Multi-Layered Structure

T. Sadoh、M. Owatari、Y. Murakami、A. Kenjo、T. Yoshitake、M. Itakura、M. Miyao (1.Department of Electronics, Kyushu University、2.Department of Applied Science for Electronics and Materials, Kyushu University)

https://doi.org/10.7567/SSDM.2003.P4-11

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