Effect of Nitrogen Annealing on the Electrical Properties of Ultrathin Crystalline γ-Al2O3 High-κ Dielectric Films Deposited on Si(111) Substrates

Mohammad Shahjahan; Takayuki Okada; Kazuaki Sawada; Makoto Ishida

doi:https://doi.org/10.7567/SSDM.2003.P4-16

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P4-16] Effect of Nitrogen Annealing on the Electrical Properties of Ultrathin Crystalline γ-Al2O3 High-κ Dielectric Films Deposited on Si(111) Substrates

Mohammad Shahjahan, Takayuki Okada, Kazuaki Sawada, Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.2003.P4-16

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