[P4-3] Compact Electrical Characterization of Nano-CMOS Transistor with 1.2nm Ultrathin Gate Dielectric

Hee Sung Kang、Wu-yun Quan、Kyung Soo Kim、Chang Bong Oh、Hyuk Ju Ryu、Chang Ki Baek、Bomsoo Kim、Young Wug Kim、Kwang Pyuk Suh、Dae M. Kim (1.Technology Development Team, System LSI Division, Samsung Electronics、2.Computation Sciences, Korea Institute for Advanced Study)

https://doi.org/10.7567/SSDM.2003.P4-3