Side Gating Phenomenon in GaAs Quantum Wire Transistors

Rui Jia; Seiya Kasai; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.2003.P7-4

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P7-4] Side Gating Phenomenon in GaAs Quantum Wire Transistors

Rui Jia、Seiya Kasai、Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics (RCIQE) and、2.Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.2003.P7-4

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