Side Gating Phenomenon in GaAs Quantum Wire Transistors

Rui Jia; Seiya Kasai; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.2003.P7-4

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P7-4] Side Gating Phenomenon in GaAs Quantum Wire Transistors

Rui Jia, Seiya Kasai, Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics (RCIQE) and, 2.Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.2003.P7-4

▲