Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys for Single-Electron Devices

P. W. Li; W. M. Liao; S. W. Lin; P. S. Chen; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2003.P8-7

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P8-7] Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys for Single-Electron Devices

P. W. Li、W. M. Liao、S. W. Lin、P. S. Chen、M. J. Tsai (1.Department of Electrical Engineering, National Central University、2.Electronics Research and Service Organization, ITRI)

https://doi.org/10.7567/SSDM.2003.P8-7

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