Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys for Single-Electron Devices

P. W. Li; W. M. Liao; S. W. Lin; P. S. Chen; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2003.P8-7

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P8-7] Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys for Single-Electron Devices

P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen, M. J. Tsai (1.Department of Electrical Engineering, National Central University, 2.Electronics Research and Service Organization, ITRI)

https://doi.org/10.7567/SSDM.2003.P8-7

▲