High Performance Buried Gate Surrounding Gate Transistor (BG-SGT) for Future Three-Dimensional Devices

Makoto Iwai; Yasue Yamamoto; Ryohsuke Nishi; Hiroshi Sakuraba; Tetsuo Endoh; Fujio Masuoka

doi:https://doi.org/10.7567/SSDM.2003.P9-6

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P9-6] High Performance Buried Gate Surrounding Gate Transistor (BG-SGT) for Future Three-Dimensional Devices

Makoto Iwai、Yasue Yamamoto、Ryohsuke Nishi、Hiroshi Sakuraba、Tetsuo Endoh、Fujio Masuoka (1.Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.2003.P9-6

▲