[P9-9L] Patterned SIMOX SOI materials with high degree of surface planarity and low defect density

Yemin Dong、Xi Wang、Meng Chen、Jing Chen、Xiang Wang、Wanbing Yi、Bo Jin、Enxia Zhang (1.Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS)、2.Shanghai Simgui Technology Co., Ltd.、3.TD Unit, Grate Semiconductor Manufacturing Corporation)

https://doi.org/10.7567/SSDM.2003.P9-9L