Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application

Kenzo Manabe; Kensuke Takahashi; Taeko Ikarashi; Ayuka Morioka; Heiji Watanabe; Takuya Yoshihara; Toru Tatsumi

doi:https://doi.org/10.7567/SSDM.2004.A-2-1

2004 International Conference on Solid State Devices and Materials

Sep 14, 2004 - Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan

[A-2-1] Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application

Kenzo Manabe, Kensuke Takahashi, Taeko Ikarashi, Ayuka Morioka, Heiji Watanabe, Takuya Yoshihara, Toru Tatsumi (1.System Devices Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2004.A-2-1

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