Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application

Kenzo Manabe; Kensuke Takahashi; Taeko Ikarashi; Ayuka Morioka; Heiji Watanabe; Takuya Yoshihara; Toru Tatsumi

doi:https://doi.org/10.7567/SSDM.2004.A-2-1

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜 2004年9月17日
Tower Hall Funabori, Tokyo, Japan

[A-2-1] Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application

Kenzo Manabe、Kensuke Takahashi、Taeko Ikarashi、Ayuka Morioka、Heiji Watanabe、Takuya Yoshihara、Toru Tatsumi (1.System Devices Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2004.A-2-1

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