High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics

Kensuke Takahashi; Kenzo Manabe; Ayuka Morioka; Taeko Ikarashi; Takuya Yoshihara; Heiji Watanabe; Toru Tatsumi

doi:https://doi.org/10.7567/SSDM.2004.A-2-3

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜 2004年9月17日
Tower Hall Funabori, Tokyo, Japan

[A-2-3] High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics

Kensuke Takahashi、Kenzo Manabe、Ayuka Morioka、Taeko Ikarashi、Takuya Yoshihara、Heiji Watanabe、Toru Tatsumi (1.System Devices Research. Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2004.A-2-3

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