[A-2-6] Dependences of Device Performances on Interfacial Layer Materials of High-k MISFETs due to Wave Function Penetration into Gate Dielectrics

Mizuki Ono、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.A-2-6