[A-7-3] Robust TiN/AHO/HSG-Cylinder Capacitor for High Density DRAMs

S.G. Kim, C.S. Hyun, D. Park, H.J. Moon, H.C. Kim, S.J. Kim, T.H. Cho, H.J. Kang, S.M. Jeong, S.W. Lee, S.H. Lee, J.G. Suk, B.K. Lim, Y.S. Jeon, S.G. Jeon, K.Y. Lee, K.S. Oh, W.S. Lee (1.DRAM Process Architecture Team, 2.Fab Team 3, 3.SRAM/Flash Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2004.A-7-3