[B-1-4] Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks

Yoshiki Kamata、Yuuichi Kamimuta、Tsunehiro Ino、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2004.B-1-4