Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks

[B-1-4] Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks

Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)