[B-1-5] 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs

Motofumi Saitoh、Nobuyuki Ikarashi、Heiji Watanabe、Shinji Fujieda、Hirohito Watanabe、Toshiyuki Iwamoto、Ayuka Morioka、Takashi Ogura、Masayuki Terai、Koji Watanabe、Makoto Miyamura、Toru Tatsumi、Taeko Ikarashi、Koji Masuzaki、Yukishige Saito、Yuko Yabe (1.System Devices Research Laboratories, NEC Corp.)

https://doi.org/10.7567/SSDM.2004.B-1-5